aph9-lab6-22

Published September 25, 2013 at 1024 × 768 in MOSFET/BJT Lab
Grow the gate oxide region at $1000^oC$ (first at $1 ft^3/hr O_2$ for 30 minutes, then $N_2$ for 10 minutes.

Grow the gate oxide region at $1000^oC$ (first at $1 ft^3/hr O_2$ for 30 minutes, then $N_2$ for 10 minutes.

Leave a Reply

Your email address will not be published. Required fields are marked *